Manufacturer :ABB

Voltage Rating: 1000V

Current Rating: 50A

Type: IGBT (Insulated Gate Bipolar Transistor) Module

Model: 3AXD50000711901 2MBI1000VXB-170E-50

Voltage Rating (V_CE): 1000V

Current Rating (I_C): 50A

Power Dissipation: 200W

Insulation Voltage: 2500V (minimum)

Isolation Resistance: >100MΩ at 25°C

Maximum Junction Temperature (T_jmax): 150°C

Storage Temperature: -40°C to 150°C

Gate Drive Voltage: 15V (typical)

Reverse Recovery Time (T_rr): <1.0μs (typical)

The ABB 3AXD50000711901 2MBI1000VXB-170E-50 IGBT Module is a highly efficient power semiconductor module designed for industrial power electronics applications. Utilizing Insulated Gate Bipolar Transistor (IGBT) technology, it offers a unique combination of high switching speed and low conduction losses, making it an ideal choice for medium to high-power applications.

This module is rated for a 1000V voltage and a 50A current capacity, which makes it suitable for use in motor drives, inverters, and power conversion systems. It also incorporates freewheeling diodes for enhanced performance in applications where fast recovery and efficient energy management are required.

The 2MBI1000VXB-170E-50 module is engineered for compactness and reliability, with a robust design that ensures reliable operation even under demanding environmental conditions. It is widely used in industrial motor drives, renewable energy inverters, and other applications that demand high-efficiency power conversion.